Canali, C.; Magistrali, F.; Sangalli, M.; Tedesco, C.; Zanoni, E.; Castellaneta, G.; Marchetti, F.,
"Reliability aspects of commercial AlGaAs/GaAs HEMTs," 
Reliability Physics Symposium, 1991, 29th Annual Proceedings., International , vol., no., pp.206,213, 9-11 April 1991
URL: http://140.98.202.196/stamp/stamp.jsp?tp=&arnumber=146016&isnumber=3908

Canali, C.; Capasso, F.; Malik, Roger; Neviani, A.; Pavan, P.; Tedesco, Carlo; Zanoni, E.,
"Measurement of the electron ionization coefficient at low electric fields in GaAs-based heterojunction bipolar transistors," 
Electron Device Letters, IEEE , vol.15, no.9, pp.354,356, Sept. 1994
URL: http://140.98.202.196/stamp/stamp.jsp?tp=&arnumber=311132&isnumber=7539

Paccagnella, A.; Zanoni, E.; Tedesco, C.; Lanzieri, C.; Cetronio, A.,
"Correlation between surface-state density and impact ionization phenomena in GaAs MESFET's," Electron Devices, IEEE Transactions on , vol.38, no.12, pp.2682,2684, Dec 1991
URL: http://140.98.202.196/stamp/stamp.jsp?tp=&arnumber=158692&isnumber=4086

Canali, C.; Neviani, A.; Tedesco, Carlo; Zanoni, E.; Centronio, A.; Lanzieri, C.,
"Dependence of ionization current on gate bias in GaAs MESFETs," Electron Devices, IEEE Transactions on , vol.40, no.3, pp.498,501, Mar 1993
URL: http://140.98.202.196/stamp/stamp.jsp?tp=&arnumber=199353&isnumber=5182

Canali, C.; Castellaneta, Giuseppe; Magistrali, Fabrizio; Sangalli, Marco; Tedesco, Carlo; Zanoni, E., "Thermally Activated Failure Modes and Mechanisms of High Electron Mobility Transistors," Solid State Device Research Conference, 1989. ESSDERC '89. 19th European , vol., no., pp.813,816, 11-14 Sept. 1989
URL: http://140.98.202.196/stamp/stamp.jsp?tp=&arnumber=5436477&isnumber=5436370

Tedesco, C.; Canali, C.; Magistrali, F.; Paccagnella, A.; Zanoni, E.,
"Hot-Electron Induced Degradation in AlGaAs/GaAs HEMTs," 
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European , vol., no., pp.405,408, 14-17 Sept. 1992
URL: http://140.98.202.196/stamp/stamp.jsp?tp=&arnumber=5435127&isnumber=5435105

Tedesco, C.; Mastrapasqua, M.; Canali, C.; Luryi, S.; Zanoni, E.,
"Impact Ionization Effect in Complementary CHarge Injection Transistor," Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European , vol., no., pp.437,440, 13-16 Sept. 1993
URL: http://140.98.202.196/stamp/stamp.jsp?tp=&arnumber=5435539&isnumber=5435445


Canali, C.; Magistrali, F.; Paccagnella, A.; Sangalli, M.; Tedesco, C.; Zanoni, E.,
"Trap-related effects in AlGaAs/GaAs HEMTs," 
Circuits, Devices and Systems, IEE Proceedings G , vol.138, no.1, pp.104,108, Feb 1991
URL: http://140.98.202.196/stamp/stamp.jsp?tp=&arnumber=87819&isnumber=2864

Zanoni, E.; Manfredi, M.; Bigliardi, Stefano; Paccagnella, A.; Pisoni, Pietro; Tedesco, Carlo; Canali, C., "Impact ionization and light emission in AlGaAs/GaAs HEMT's," Electron Devices,
IEEE Transactions on , vol.39, no.8, pp.1849,1857, Aug 1992
URL: http://140.98.202.196/stamp/stamp.jsp?tp=&arnumber=144674&isnumber=3872

Tedesco, C.; Manfredi, M.; Paccagnella, A.; Zanoni, E.; Canali, C.,
"Hot carrier induced photon emission in submicron GaAs devices," 
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International , vol., no., pp.437,440, 8-11 Dec. 1991
URL: http://140.98.202.196/stamp/stamp.jsp?tp=&arnumber=235361&isnumber=6055

Tedesco, Carlo; Zanoni, E.; Canali, C.; Bigliardi, Stefano; Manfredi, M.; Streit, D.C.; Anderson, W.T., "Impact ionization and light emission in high-power pseudomorphic AlGaAs/InGaAs HEMTs," 
Electron Devices, IEEE Transactions on , vol.40, no.7, pp.1211,1214, Jul 1993
URL: http://140.98.202.196/stamp/stamp.jsp?tp=&arnumber=216423&isnumber=5658

Zanoni, E.; Tedesco, C.; Paccagnella, A.; Canali, C.; Bigliardi, S.; Manfredi, M.,
"High Energy Photon Emission in GaAs MESFETs and AIGaAs/GaAs HEMTs,"
 Solid State Device Research Conference, 1991. ESSDERC '91. 21st European , vol., no., pp.581,584, 16-19 Sept. 1991
URL: http://140.98.202.196/stamp/stamp.jsp?tp=&arnumber=5435266&isnumber=5435231

Tedesco, C.; Mastrapasqua, M.; Canali, C.; Luryi, S.; Manfredi, M.; Zanoni, E.; Sivco, D.L.; Cho, A.Y., "Impact ionization and real-space transfer of minority carriers in charge injection transistors," 
Electron Device Letters, IEEE , vol.15, no.10, pp.377,379, Oct. 1994
URL: http://140.98.202.196/stamp/stamp.jsp?tp=&arnumber=320973&isnumber=7700

Canali, C.; Corti, E.; Gabrielli, B.; Magistrali, F.; Paccagnella, A.; Sangalli, M.; Tedesco, C.,
"Change of gm(f) and breakdown voltage induced by thermal annealing of surface states in power MESFETs," 
Electron Devices, IEEE Transactions on , vol.37, no.4, pp.1163,1165, Apr 1990
URL: http://140.98.202.196/stamp/stamp.jsp?tp=&arnumber=52456&isnumber=1888

Canali, C.; Paccagnella, A.; Pisoni, P.; Tedesco, C.; Telaroli, P.; Zanoni, E.,
"Impact ionization phenomena in AlGaAs/GaAs HEMTs," 
Electron Devices, IEEE Transactions on , vol.38, no.11, pp.2571,2573, Nov 1991
URL: http://140.98.202.196/stamp/stamp.jsp?tp=&arnumber=97428&isnumber=3091